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| (R) ISO 9001 Registered Process C3025 CMOS 3m 10 Volt Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.65 40 3.05 16.5 12 Typical 0.85 0.87 48 3.40 0.550 Maximum 1.05 56 3.75 Unit V V1/2 A/V2 m m V V Comments 100x4m 100x4m 100x100m 100x4m Per side P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP P P LeffP WP BVDSSP VTFP(P) Minimum -0.7 13 3.00 -16.5 -12 Typical -0.9 0.75 16 3.35 0.8 Maximum -1.1 19 3.70 Unit V V1/2 A/V2 m m V V Comments 100x4m 100x4m 100x100m 100x4m Per side Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Interpoly Oxide Thickness Gate Poly Sheet Resistance Bottom Poly Sheet Res. Metal-1 Sheet Resistance Passivation Thickness Symbol P-well(f) N+ xjN+ P+ xjP+ TGOX TP1P2 POLY1 POLY2 M1 TPASS Minimum 3.25 13 50 45 56 15 15 Typical 5.25 20 0.8 80 0.7 48 66 22 22 50 200+900 Maximum 7.25 27 100 51 76 30 30 Unit K/ / m / m nm nm / / m/ nm Comments P-well oxide+nit. Capacitance Gate Oxide Metal-1 to Poly-1 Metal-1 to Silicon Poly-1 to Poly-2 Symbol COX CM1P CM1S CP1P2 Minimum 0.68 0.047 0.027 0.453 Typical 0.72 0.0523 0.30 0.523 Maximum 0.78 0.0575 0.034 0.617 Unit fF/m2 fF/m2 fF/m2 fF/m2 Comments (c) IMP, Inc. 93 Process C3025 Physical Characteristics Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Metal-1 Width/Space Gate Poly Width/Space P <100> 15 - 25 -cm 10V P-well 1 2 2.0x2.0m 3.5 / 2.5m 3.0 / 3m N+/P+ Width/Space N+ To P+ Space Contact To Poly Space Contact Overlap Of Active Contact Overlap Of Poly Metal-1 Overlap Of Contact Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch 3.0 / 3.0m 12m 2.5m 1.5m 1.0m 1.0m 100x100m 5.0m 80.0m Special Feature of C3025 Process: 10 Volt P-well single metal analog process. 94 C3025-4-98 |
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